| 1. | Its optimum growth temperature was at 32 , and the optimum growth ph was at ph 5
其最适生长温度为32 ，最佳生长ph值为5 。 |
| 2. | The growth temperature was 518 “ c , as probed by a profile thermocouple located inside the reactor
生长温度在518c ，由位于反应腔下的热电耦检测。 |
| 3. | It indicats that the growth temperature , annealing temperature and time greatly affects the quality of mgb
超导薄膜表面形貌晶体结构超导电性的影响。 |
| 4. | The films grown at different temperatures but all annealed at 670 for 5min are also compared to study the effect of growth temperature
还比较了分别在不同温度下沉积，然后在670下退火5min的薄膜的超导性质。 |
| 5. | Reflective index n and extinction coefficient k increase with growth temperature , transmittance is about 80 % in the wavelength of 450 - 800 nm
Bst薄膜在可见光范围内透射率约83 %左右,透射率受薄膜组分的影响。 |
| 6. | The effects of the growth temperature and duration on the growth of aligned carbon nanotube array were studied with the help of sem and tem
为了优化定向碳纳米管阵列的制备，对生长温度及生长时间进行了研究。 |
| 7. | The template must also show the proper size and aspect ratio , otherwise , the template particles must be stable with the matrix at the desired growth temperature and environment
模板颗粒必须具有和pmn - pt类似的晶体结构和晶胞参数；模板颗粒必须具备足够大的径高比。 |
| 8. | We studied the factor that influence the quality of gaas , algaas and ingaas by mbe , and studied the growth temperature , growth time and the flux ratio of v - iii beam
研究了影响mbe生长gaas 、 algaas和ingaas等单晶材料质量的一些因素，对mbe生长温度、生长时间和生长时的-族束流比进行了研究。 |
| 9. | The experiments show : growth temperature is one of the key growth parameter by which the surface morphology , alloy composition , crystalline quality , mobility and carrier concentration are influenced
实验表明：生长温度是一个重要的生长参数，它对外延层的表面形貌、组分、结晶质量、迁移率、载流子浓度有着很大影响。 |
| 10. | In addition , the growth temperature of films in high substrate temperature process is more similar to that of the single crystal growth in which the hexagonal system shows the sheet growth habit
高温下的薄膜生长更接近于单晶的生长条件，六角晶系晶体的结晶习性是片状生长，表现为片状的单晶，这种习性受晶体自身结构特性的限制。 |
